Perhaps, you might care to do that using the benchmark tests that I will show you
in the next video. And I should emphasize that the model
list that I will present is not exhaustive.
There are other excellent efforts in modeling.
There are some reference to such models in the book.
The first model is BSIM3 and BSIM4. these are the most widely used models in
the industry. BSIM stands for Berkeley Short-Channel
IGFET model. IGFET is an alternative acronym for
MOSFET, it stands for Insulated Gate Field Effect Transistor.
This model is threshold-based, source-referenced, and it uses
interpolation between strong and weak inversion.
It has, in BSIM4, there is improved small dimension effects modeling.
For example, gate tunneling current STI and well-proximity, effects we haven't
covered yet. Mechanical stress which we will mention
later, and so on. Another model is EKV, EKV stand for
Enz-Krummenacher-Vittoz who were the developers at CSEM and EPFL in
Switzerland. This is a charge-based model, it is
largely equivalent to a surface-based model, you can look up the corresponding
material in the book. It is based on channel charges
linearization. It's completely symmetric and it is
body-referenced. And there's a single companion model for
hand analysis that goes with EKV model. Then, there is an upcoming model, BSIM6.
It has not been released at the time I am recording this lecture.
It is a collaboration between BSIM and EKV.