Modeling for Circuit Simulation – Representative Compact Models

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MOS Transistors

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Columbia University

MOS Transistors

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PLEASE NOTE: This version of the course has been formed from an earlier version, which was actively run by the instructor and his teaching assistants. Some of what is mentioned in the video lectures and the accompanying material regarding logistics, book availability and method of grading may no longer be relevant to the present version. Neither the instructor nor the original teaching assistants are running this version of the course. There will be no certificate offered for this course. Learn how MOS transistors work, and how to model them. The understanding provided in this course is essential not only for device modelers, but also for designers of high-performance circuits.

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Small-Dimension Effects 2; Modeling for Circuits Simulation

This module we will finish with small dimension effects, and then talk about models for circuit simulation (the circuit designers among you are probably already using such models). We discuss what it takes to make a good model for circuit simulation (among other things: a lot of caution and care, and about 20,000 lines of code!), and how you can spot possible problems with such models. Although models for circuit simulation include capabilities we have not yet discussed, such as charge modeling, we think you know enough about models at this point to be able to follow this general discussion (which is out of sequence – it’s from Chap. 10 in the book, where you can find much more on the subject).

Modeling for Circuit Simulation – Representative Compact Models5:14

Modeling for Circuit Simulation – Benchmark Tests4:48

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Yannis Tsividis
Charles Batchelor Professor of Electrical Engineering
Fu Foundation School of Engineering and Applied Science

In this very brief video, we will list several professional compact models.

We will mention very briefly several compact models that are widely used.

There are many features in each model and I will only mention a few of them.

But practically, all of the effects that we have been discussing in this class are

modeled by these advanced compact models. I will not make any attempt to compare

these models. That's very difficult to do.

Perhaps, you might care to do that using the benchmark tests that I will show you

in the next video. And I should emphasize that the model

list that I will present is not exhaustive.

There are other excellent efforts in modeling.

There are some reference to such models in the book.

The first model is BSIM3 and BSIM4. these are the most widely used models in

the industry. BSIM stands for Berkeley Short-Channel

IGFET model. IGFET is an alternative acronym for

MOSFET, it stands for Insulated Gate Field Effect Transistor.

This model is threshold-based, source-referenced, and it uses

interpolation between strong and weak inversion.

It has, in BSIM4, there is improved small dimension effects modeling.

For example, gate tunneling current STI and well-proximity, effects we haven't

covered yet. Mechanical stress which we will mention

later, and so on. Another model is EKV, EKV stand for

Enz-Krummenacher-Vittoz who were the developers at CSEM and EPFL in

Switzerland. This is a charge-based model, it is

largely equivalent to a surface-based model, you can look up the corresponding

material in the book. It is based on channel charges

linearization. It's completely symmetric and it is

body-referenced. And there's a single companion model for

hand analysis that goes with EKV model. Then, there is an upcoming model, BSIM6.

It has not been released at the time I am recording this lecture.

It is a collaboration between BSIM and EKV.

It is charge-based, it's symmetric, body referenced and, of course, the hopes the

hopes are high that this kind of collaboration will lead to a very

advanced model. Then there is the PSP model.

This is a collaboration between the group of Professor Gildenblat at Arizona State

and Philips. It's a surface potential-based model,

symmetric and body referenced. And they use the symmetric linearization

of surface potential, which was one of the simplifications of the all region

models that we have covered a couple of weeks ago.

The surface potential formulation is extended to accumulation and also to the

extrinsic regions of the transistor. And there is a very efficent solution for

the surface potential, calimed to be with ten picovolts of accuracey, that goes

with this model. The surface potential formulation allows

evaluation of capacitances even in the pinchoff region.

And there is Advanced mobility and velocity saturation modeling,

Large-signal Norm Quasi Static Modeling, and Advanced junction modeling as well.

Finally, we have the HiSIM model. This has been led by Professor

Miura-Mattausch at Hiroshima University in Japan.

It is surface potential-based, symmetric and body referenced, and it has an

efficient efficient iterative solution for surface potential, again, 10 pV of

accuracy. And the surface potential allows

evaluation of capacitances even in the pinchoff region.

all of these pieces of information related to the capacitances will make

more sense once we do discuss the small signal capacitances later on in this

course. For more information on Compact Models

such as the ones I mentioned, please see the Compact Model Council website, and

reference is given in Chapter 10 of the book.

In this video, I have presented a few of the physical compact models in use today.

In the next and final video in this series, I will discuss benchmark tests

for models.

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